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SSM3J358R-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SSM3J358R-HXY product

SSM3J358R-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23-3L

The SSM3J358R is a P-Channel MOSFET designed for low-voltage switching and battery protection, featuring a -20V VDS and -7A ID.

Best for

  • Battery protection circuits
  • Load switching
  • PWM applications

Avoid if

  • High-voltage applications exceeding -20V
  • Applications requiring continuous currents significantly above 7A

Check before use

  • Thermal design on PCB
  • Gate drive voltage levels

Key specifications

VDS
-20 V
ID
-7 A
RDS(ON)
20 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

c599e18998b194b7565b43de51f487d6_2403261655_HXY-MOSFET-SSM3J358R-HXY_C22366483.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SSM3J358R-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low gate charge and low RDS(ON) at gate voltages as low as 2.5V.