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ST36N10D-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ST36N10D-HXY product

ST36N10D-HXY

MOSFETs

MOSFETN-Channel100VTO-252

The ST36N10D is a 100V, 30A N-Channel MOSFET in a TO-252-2L package, designed for efficient switching in battery protection and power management circuits.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal design and PCB layout for heat dissipation

Key specifications

VDS
100 V
ID
30 A
RDS(on)
48 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

64bed6182fea9271755079ef41295441_2403261740_HXY-MOSFET-ST36N10D-HXY_C22367066.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ST36N10D-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, rated for 100V and 30A.