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STD10PF06-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STD10PF06-HXY product

STD10PF06-HXY

MOSFETs - Single

P-ChannelMOSFET60V10A

The STD10PF06 is a P-Channel enhancement mode MOSFET designed for switching applications, featuring a -60V breakdown voltage and -10A current rating in a TO-252-2L package.

Best for

  • Battery protection
  • Load switching
  • Motor control

Avoid if

  • Applications requiring extremely high-speed switching beyond the device's rise/fall time capabilities.

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-60 V
ID
-10 A
RDS(on)
< 140 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Switching

Datasheet

3265d4ce703e31cc8f1df0464976f618_2404231718_HXY-MOSFET-STD10PF06-HXY_C22366777.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STD10PF06-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET utilizing advanced trench technology, optimized for low gate charge and low RDS(on).