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STD25N10F7-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STD25N10F7-HXY product

STD25N10F7-HXY

MOSFETs - Single

MOSFETN-Channel100VTO-252

The STD25N10F7 is a 100V, 30A N-Channel MOSFET in a TO-252-2L package, designed for battery protection and switching applications.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring extremely low RDS(on) below 10mΩ

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
100 V
ID
30 A
RDS(on)
48 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

6ddecd7b99ef55a388407b43e8212a9f_2403261740_HXY-MOSFET-STD25N10F7-HXY_C22367072.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STD25N10F7-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using advanced trench technology, optimized for low gate charge and low on-resistance.