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STD6NF10-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STD6NF10-HXY product

STD6NF10-HXY

FETs

MOSFETN-Channel100VDPAK

The STD6NF10 is a 100V N-Channel MOSFET in a DPAK package, designed for efficient power switching and DC/DC conversion.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring extremely high reliability (e.g., life-support systems).

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
100 V
ID
15 A
RDS(ON)
112 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

42c7dcb8fb1240b0c0a2adb3247d8089_2404231719_HXY-MOSFET-STD6NF10-HXY_C22367157.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STD6NF10-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The STD6NF10 is an N-Channel enhancement mode MOSFET from HXY MOSFET, utilizing trench technology for low on-resistance and gate charge.