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STDRIVEG600 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STDRIVEG600 product

STDRIVEG600

Full Half-Bridge Drivers

Gate DriverGaNHalf-Bridge

The STDRIVEG600 is a high-performance half-bridge gate driver optimized for GaN FETs and Si MOSFETs in high-voltage applications.

Best for

  • GaN-based power conversion
  • High-frequency switching applications

Avoid if

  • Low-voltage applications where a simpler driver suffices

Check before use

  • Bootstrap capacitor sizing
  • Gate loop layout

Key specifications

Max High-Side Voltage
600 V
Peak Source/Sink Current
5.5 A / 6 A
Propagation Delay
45 ns

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

f9eeb9084959fdc578f29022cd6844b5_2211080600_STMicroelectronics-STDRIVEG600_C3655212.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STDRIVEG600: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single-chip half-bridge gate driver designed for Enhancement mode GaN FETs or N-channel power MOSFETs, capable of handling up to 600V on the high-side.