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STGB30M65DF2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STGB30M65DF2 product

STGB30M65DF2

Transistors - IGBTs - Single

IGBT650VTrench GateD2PAK

The STGB30M65DF2 is a 650V, 30A M-series trench gate field-stop IGBT optimized for high-efficiency inverter applications.

Best for

  • Motor control
  • UPS
  • PFC

Avoid if

  • Applications requiring extremely low gate drive voltages

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

V(BR)CES
650 V
IC (100°C)
30 A
VCE(sat) (typ)
1.55 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlUPSPFC

Datasheet

STGB30M65DF2-STMicroelectronics-datasheet-94103466.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STGB30M65DF2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V, 30A trench gate field-stop IGBT from STMicroelectronics, designed for high-efficiency power conversion applications like motor control, UPS, and PFC.