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STGB40H65FB AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STGB40H65FB product

STGB40H65FB

Transistors - IGBTs - Single

IGBT650VHigh SpeedTrench Gate

The STGB40H65FB is a high-speed 650V, 40A IGBT optimized for high-efficiency power conversion applications.

Best for

  • Photovoltaic inverters
  • High-frequency power converters

Avoid if

  • Low-power or low-frequency applications where cost-optimized standard IGBTs suffice.

Check before use

  • Thermal dissipation requirements and gate drive voltage levels.

Key specifications

Collector-Emitter Voltage
650 V
Continuous Collector Current
40 A (at 100°C)
Max Junction Temperature
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial Inverters

Datasheet

STGB40H65FB-STMicroelectronics-datasheet-65470414.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STGB40H65FB: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a trench gate field-stop IGBT from the HB series, rated for 650V and 40A, designed for high-speed switching.