ProjectsPricingInsights

STGD4M65DF2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STGD4M65DF2 product

STGD4M65DF2

Transistors - IGBTs - Single

IGBT650VDPAKSTMicroelectronics

The STGD4M65DF2 is a 650V, 4A trench gate field-stop IGBT from STMicroelectronics, optimized for low-loss applications like motor control, UPS, and PFC.

Best for

  • Motor control
  • UPS
  • PFC

Avoid if

  • Applications requiring higher continuous current than 8A at 25°C.

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

V(BR)CES
650 V
IC (25°C)
8 A
VCE(sat) (typ)
1.6 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor controlUPSPFC

Datasheet

STGD4M65DF2-STMicroelectronics-datasheet-65695200.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STGD4M65DF2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an M-series trench gate field-stop IGBT designed for high efficiency and low-loss performance in power inverter systems.