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STGW40H65DFB AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STGW40H65DFB product

STGW40H65DFB

Transistors - IGBTs - Single

IGBT650V40ATrench GateSTMicroelectronics

The STGW40H65DFB is a 650V, 40A high-speed IGBT from STMicroelectronics, optimized for high-efficiency power conversion applications.

Best for

  • Photovoltaic inverters
  • High-frequency power conversion

Avoid if

  • Low-voltage applications where conduction losses might be higher than specialized low-voltage MOSFETs

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VCES
650 V
IC @ 100°C
40 A
VCE(sat) (typ)
1.6 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

STGW40H65DFB-STMicroelectronics-datasheet-62341221.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STGW40H65DFB: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V, 40A Trench gate field-stop IGBT featuring a fast soft recovery antiparallel diode, designed for high-speed switching.