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STGW60H65DFB-4 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STGW60H65DFB-4 product

STGW60H65DFB-4

Transistors - IGBTs - Single

IGBT650VHigh SpeedTrench Gate

The STGW60H65DFB-4 is a 650V, 60A high-speed IGBT featuring a trench gate field-stop structure and a Kelvin pin for enhanced switching efficiency.

Best for

  • Photovoltaic inverters
  • High-frequency power converters

Avoid if

  • Low-frequency or low-power applications where standard IGBTs are sufficient.

Check before use

  • Gate drive requirements and thermal dissipation capabilities.

Key specifications

Collector-Emitter Voltage
650 V
Collector Current
60 A
Max Junction Temperature
175 °C

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial Inverters

Datasheet

STGW60H65DFB-4-STMicroelectronics-datasheet-93404516.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STGW60H65DFB-4: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-speed HB series IGBT rated for 650 V and 60 A, optimized for high-frequency power conversion applications.