STGWA30HP65FB2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STGWA30HP65FB2 product

STGWA30HP65FB2

Transistors - IGBTs - Single

IGBT650VHB2 SeriesTrench Gate

The STGWA30HP65FB2 is a 650V, 30A high-speed IGBT from STMicroelectronics, optimized for high-efficiency power conversion applications.

Best for

  • Welding equipment
  • Power factor correction

Avoid if

  • Low-power or low-frequency applications where high-speed switching is not required.

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Collector-Emitter Voltage
650 V
Continuous Collector Current
30 A (at 100°C)
Max Junction Temperature
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

WeldingPower Factor Correction

CAD Models

Download ECAD models for STGWA30HP65FB2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V, 30A trench gate field-stop IGBT belonging to the high-speed HB2 series, packaged in a TO-247 long leads format.