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STGWA40H65DFB AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STGWA40H65DFB product

STGWA40H65DFB

Transistors - IGBTs - Single

IGBT650VHigh SpeedTrench Gate

The STGWA40H65DFB is a 650V, 40A high-speed IGBT optimized for high-frequency power conversion, featuring low conduction losses and a fast integrated antiparallel diode.

Best for

  • Photovoltaic inverters
  • High-frequency power conversion

Avoid if

  • Low-frequency applications where switching speed is not critical

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Collector-Emitter Voltage
650 V
Collector Current
40 A (at 100°C)
Max Junction Temp
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

STGWA40H65DFB-STMicroelectronics-datasheet-62341221.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STGWA40H65DFB: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V, 40A trench gate field-stop IGBT from STMicroelectronics' HB series, designed for high-efficiency power conversion.