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STGWA40H65DFB2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STGWA40H65DFB2 product

STGWA40H65DFB2

Transistors - IGBTs - Single

IGBT650V40AHB2 SeriesFast Switching

The STGWA40H65DFB2 is a high-speed 650V, 40A IGBT from STMicroelectronics' HB2 series, designed for efficient power conversion in industrial and renewable energy applications.

Best for

  • High-speed switching power applications
  • Industrial power conversion

Avoid if

  • Low-power or low-frequency applications where cost-optimized standard IGBTs suffice

Check before use

  • Thermal resistance and junction temperature limits

Key specifications

Collector-Emitter Voltage
650 V
Collector Current
40 A
Saturation Voltage
1.55 V
Max Junction Temp
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

cae9a11f157e1ef28ec6404a19da0867_stgwa40h65dfb2.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STGWA40H65DFB2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V, 40A trench gate field-stop IGBT from the HB2 series, featuring a co-packaged fast soft recovery diode.