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STGWA60H65DFB AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STGWA60H65DFB product

STGWA60H65DFB

Transistors - IGBTs - Single

IGBT650VHigh SpeedTrench Gate

The STGWA60H65DFB is a 650V, 60A high-speed IGBT optimized for high-frequency power conversion, such as PV inverters.

Best for

  • Photovoltaic inverters
  • High-frequency power conversion

Avoid if

  • Low-frequency or low-power applications where cost-optimized standard IGBTs suffice.

Check before use

  • Ensure the gate driver can handle the 306 nC gate charge and that the thermal design supports 375 W dissipation.

Key specifications

V(BR)CES
650 V
IC (100°C)
60 A
VCE(sat) (typ)
1.6 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

STGWA60H65DFB-STMicroelectronics-datasheet-62336319.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STGWA60H65DFB: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-speed HB series trench gate field-stop IGBT rated for 650 V and 60 A, featuring an integrated antiparallel diode.