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STGWT40HP65FB AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STGWT40HP65FB product

STGWT40HP65FB

Transistors - IGBTs - Single

IGBT650VTrench GatePFC

The STGWT40HP65FB is a 650V, 40A high-speed trench gate field-stop IGBT optimized for high-efficiency power conversion and PFC applications.

Best for

  • PFC stages
  • High-frequency power conversion

Avoid if

  • Low-power applications where cost-optimized standard IGBTs suffice

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

Collector-Emitter Voltage
650 V
Continuous Collector Current
40 A (at 100°C)
Max Junction Temperature
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Factor CorrectionFrequency Converters

Datasheet

STGWT40HP65FB-STMicroelectronics-datasheet-65695204.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STGWT40HP65FB: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-speed IGBT from the HB series, utilizing trench gate field-stop technology for improved efficiency in power converters.