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STN2610D-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STN2610D-HXY product

STN2610D-HXY

MOSFETs - Single

N-ChannelMOSFET60V50A

The STN2610D is a 60V, 50A N-Channel MOSFET in a TO-252-2L package, designed for high-efficiency switching applications.

Best for

  • Battery management systems
  • Power switching circuits

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
60 V
ID
50 A
RDS(ON)
15 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

9556f08672e11c413204f5edda551339_2403251714_HXY-MOSFET-STN2610D-HXY_C22366411.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STN2610D-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology for low RDS(ON) and low gate charge.