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STN4130-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STN4130-HXY product

STN4130-HXY

MOSFETs - Single

MOSFETN-Channel60VTO-252

The STN4130 is a 60V N-Channel MOSFET in a TO-252-2L package, designed for efficient switching in battery protection and power management circuits.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal design
  • Gate drive requirements

Key specifications

VDS
60 V
ID
20 A
RDS(on)
32 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

874b8932276e83f3d1ee907ec7b3be1a_2404231719_HXY-MOSFET-STN4130-HXY_C22366895.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STN4130-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The STN4130 is an N-Channel enhancement mode MOSFET using trench technology, optimized for low RDS(ON) and low gate charge.