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STN4828-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STN4828-HXY product

STN4828-HXY

MOSFETs - Arrays

Dual N-ChannelMOSFET60V

The STN4828 is a dual N-channel enhancement mode MOSFET in an SOP-8 package, designed for 60V, 6.5A switching applications.

Best for

  • Battery management systems
  • Power switching

Avoid if

  • High-power applications exceeding 2.1W dissipation

Check before use

  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
6.5 A
RDS(on)
36 mΩ (max)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

68b2b81fbb0eb147eeccd39047151a81_2403261655_HXY-MOSFET-STN4828-HXY_C22366494.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STN4828-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The STN4828 is a dual N-channel MOSFET utilizing advanced trench technology, optimized for low gate charge and low RDS(on).