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STP110N8F6 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STP110N8F6 product

STP110N8F6

MOSFETs - Single

Power MOSFETN-Channel80V110A

The STP110N8F6 is a high-performance 80V, 110A N-channel Power MOSFET utilizing STripFET F6 trench technology, optimized for low-loss switching.

Best for

  • High-current switching
  • Power supplies
  • Motor control

Avoid if

  • Low-power, space-constrained applications where TO-220 is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive capability

Key specifications

VDS
80 V
ID
110 A
RDS(on) max
0.0065 Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingMotor Control

Datasheet

STP110N8F6-STMicroelectronics-datasheet-42663430.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STP110N8F6: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency switching applications using trench gate technology.