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STPSC10065D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STPSC10065D product

STPSC10065D

Diodes - Rectifiers - Single

SiC DiodeSchottky650V10A

The STPSC10065D is a 650 V, 10 A Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications.

Best for

  • PFC stages
  • High-frequency power supplies

Avoid if

  • Low-frequency applications where standard silicon diodes are sufficient and cheaper

Check before use

  • Thermal dissipation requirements
  • Maximum torque for TO-220 mounting

Key specifications

Reverse Voltage
650 V
Forward Current
10 A
Max Junction Temp
175 °C
Forward Voltage
1.30 V (typ)

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial Inverters

Datasheet

STPSC10065D-STMicroelectronics-datasheet-96715859.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STPSC10065D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-performance 650 V, 10 A power Schottky diode built on a silicon carbide (SiC) substrate, optimized for minimal switching losses.