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STPSC8TH13TI AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

STPSC8TH13TI product

STPSC8TH13TI

Diodes - Rectifiers - Arrays

SiCSchottky650VDual Diode

The STPSC8TH13TI is a dual 650V, 8A Silicon Carbide (SiC) Schottky diode in a series configuration, optimized for high-performance bridge-less power topologies.

Best for

  • Bridge-less power topologies
  • Hard switching applications

Avoid if

  • Applications requiring standard silicon diodes for cost-sensitive, low-frequency designs

Check before use

  • Thermal dissipation requirements
  • Insulated package mounting torque

Key specifications

Max Reverse Voltage
650 V
Average Forward Current
8 A
Max Junction Temperature
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

STPSC8TH13TI-STMicroelectronics-datasheet-21407707.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for STPSC8TH13TI: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual Schottky diode in series, built on a silicon carbide (SiC) substrate, rated for 650V and 8A per diode.