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SUD19P06-60-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SUD19P06-60-GE3-HXY product

SUD19P06-60-GE3-HXY

MOSFETs - Single

P-ChannelMOSFET60VDPAK

The SUD19P06-60-GE3 is a P-channel enhancement mode MOSFET in a TO-252-2L package, designed for high-efficiency switching applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring N-channel polarity

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
-60 V
ID
-30 A
RDS(on)
33 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

66bb5aba359e638d732e4a99f4356bcc_2403261741_HXY-MOSFET-SUD19P06-60-GE3-HXY_C22367144.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SUD19P06-60-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel MOSFET utilizing trench technology, optimized for low RDS(on) and low gate charge.