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T2N7002BK,LM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

T2N7002BK,LM product

T2N7002BK,LM

FETs

N-ChannelMOSFET60VSOT-23

The T2N7002BK is a reliable, general-purpose N-Channel MOSFET from Toshiba, ideal for high-speed switching in compact electronic designs.

Best for

  • High-speed switching
  • Signal routing
  • Small-signal control

Avoid if

  • High-power applications exceeding 400mA or 320mW dissipation

Check before use

  • Gate threshold voltage (1.1V-2.1V) to ensure compatibility with your logic levels

Key specifications

Drain-Source Voltage
60 V
Drain Current
400 mA
RDS(on)
1.05 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

High-Speed Switching

Datasheet

45b109dceff826a22bbf0bd129fb3296_1810271831_TOSHIBA-T2N7002BK-LM_C146372.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for T2N7002BK,LM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon N-channel MOSFET designed for high-speed switching, featuring a 60V drain-source voltage and 400mA current capacity.