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TBC847B,LM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

TBC847B,LM product

TBC847B,LM

Bipolar (BJT)

NPNBJTSOT23Amplifier

The TBC847B,LM is a standard NPN Bipolar Transistor in a SOT23 package, suitable for general-purpose low-frequency amplification.

Best for

  • Low-frequency signal amplification
  • General-purpose switching

Avoid if

  • High-power applications exceeding 320mW
  • High-frequency RF circuits

Check before use

  • Thermal dissipation requirements
  • hFE classification

Key specifications

VCEO
50 V
IC
150 mA
hFE
200-450

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

Low-Frequency Amplifiers

Datasheet

130ea171e3c35c959075e30364032831_1806041040_TOSHIBA-TBC847B-LM_C150169.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for TBC847B,LM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon NPN Epitaxial Bipolar Transistor manufactured by Toshiba, primarily used in low-frequency amplifier circuits.