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TF2003M-TR-JSM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

TF2003M-TR-JSM product

TF2003M-TR-JSM

MOSFETs - Single

Gate DriverHalf-Bridge250V

The TF2003M-TR is a 250V half-bridge gate driver IC designed for high-speed MOSFET and IGBT applications, featuring integrated UVLO and dead-time control.

Best for

  • Half-bridge power stages
  • Motor drive applications

Avoid if

  • Applications requiring >250V bus voltage

Check before use

  • Bootstrap diode and capacitor selection

Key specifications

Max Voltage
250V
Peak Current
290mA/600mA
Dead Time
520ns

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlInverters

Datasheet

c5776f022017a87b457e910dde98ba9f_2306261012_JSMSEMI-TF2003M-TR-JSM_C7432830.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for TF2003M-TR-JSM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage, high-speed power MOSFET and IGBT gate driver IC with independent high and low side referenced output channels, capable of driving loads up to 250V.