TF2101M-TAH Datasheet, Specs, Alternatives & ECAD | TF Semiconductor Solutions, Inc. | PartGenie

AI summary

TF2101M-TAH product

The TF2101M-TAH is a 600V high-side/low-side gate driver designed for N-channel MOSFETs and IGBTs, suitable for motor control and power conversion applications.

Best for

Motor control
DC-DC converters
Class D amplifiers

Avoid if

Applications requiring isolated gate driving

Check before use

Bootstrap capacitor sizing and PCB layout for high-voltage transients

Key specifications

Max Voltage: 600V
Supply Voltage: 10V - 20V
Peak Sink Current: 600mA

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Motor ControlPower Conversion

Datasheet

cd5f9dea3638dd4a20a02d61be058b65_2106070334_TFSS-TF2101M-TAH_C2683752.pdf

800 KB

CAD Models

Download ECAD models for TF2101M-TAH: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-speed, high-voltage gate driver IC capable of driving two N-channel MOSFETs or IGBTs in a high-side/low-side configuration.