TF2103M-TAH Datasheet, Specs, Alternatives & ECAD | TF Semiconductor Solutions, Inc. | PartGenie

AI summary

TF2103M-TAH product

The TF2103M-TAH is a high-speed, 600V half-bridge gate driver designed for N-channel MOSFETs and IGBTs, featuring integrated deadtime and robust protection features.

Best for

Motor drives
DC-DC power conversion

Avoid if

Applications requiring isolated gate driving

Check before use

Bootstrap capacitor sizing
Deadtime requirements for specific MOSFETs

Key specifications

Max Voltage: 600V
Output Current: 290mA/600mA
Deadtime: 420ns

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Motor DrivesPower Supplies

Datasheet

60ace91708d2b4907c17805cf54541f4_2106070334_TFSS-TF2103M-TAH_C2683770.pdf

800 KB

CAD Models

Download ECAD models for TF2103M-TAH: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage, high-speed gate driver IC capable of driving two N-channel MOSFETs or IGBTs in a half-bridge configuration up to 600V.