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TF2190M-TAH AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

TF2190M-TAH product

TF2190M-TAH

Amplifiers

Gate DriverHalf-Bridge600V4.5A

The TF2190M-TAH is a high-speed, high-voltage half-bridge gate driver designed for N-channel MOSFETs and IGBTs, featuring 4.5A peak drive current and 600V floating high-side capability.

Best for

  • Motor control
  • Power supplies
  • Class D amplifiers

Avoid if

  • Applications requiring galvanic isolation (this is a non-isolated driver)

Check before use

  • Bootstrap capacitor sizing and PCB layout

Key specifications

Max Voltage
600 V
Peak Current
4.5 A
Supply Voltage
10 V - 20 V
Temp Range
-40 °C to +125 °C

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Supplies

Datasheet

d20b5ba380644f4442227fb28788d698_2207181730_TFSS-TF2190M-TAH_C2917161.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for TF2190M-TAH: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage, high-speed gate driver IC capable of driving two N-channel MOSFETs or IGBTs in a half-bridge configuration.