For BusinessPricing
Request a demo

TN2106K-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

TN2106K-HXY product

TN2106K-HXY

MOSFETs - Single

N-ChannelMOSFET60VSOT-23

The TN2106K is a 60V, 0.3A N-Channel MOSFET in a SOT-23 package, designed for low-voltage switching and protection applications.

Best for

  • Battery protection
  • Small load switching

Avoid if

  • High current applications (>300mA)
  • High power dissipation environments

Check before use

  • Thermal management
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
0.3 A
RDS(on)
2 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

7804c7bbc8b3914c79985dd42a4940af_2403261741_HXY-MOSFET-TN2106K-HXY_C22367164.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for TN2106K-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET using trench technology, optimized for low gate charge and low RDS(ON) at 4.5V gate drive.