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TP0610K-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

TP0610K-T1-GE3 product

TP0610K-T1-GE3

MOSFETs - Single

P-ChannelMOSFET60VSOT-23

The TP0610K-T1-GE3 is a 60V P-Channel TrenchFET MOSFET in a SOT-23 package, ideal for low-power switching applications.

Best for

  • Relay drivers
  • Solenoid drivers
  • Battery-operated systems

Avoid if

  • High-current applications exceeding 185 mA

Check before use

  • Gate drive requirements
  • Thermal management

Key specifications

VDS
-60 V
ID
-185 mA
RDS(on)
6 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541210095.0

Application

Power ManagementIndustrial Drivers

Datasheet

7d1f3fcaca2b434de78649d18ecee6f3_1810010329_Vishay-Intertech-TP0610K-T1-GE3_C193222.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for TP0610K-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel 60 V power MOSFET utilizing TrenchFET technology, optimized for high-side switching and driver applications.