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TP0620N3-G AI Analysis:
Specs, Applications & Alternatives

AI summary

TP0620N3-G product

TP0620N3-G

MOSFETs - Single

P-ChannelMOSFET200VTO-92

The TP0620N3-G is a P-Channel enhancement-mode vertical DMOS FET designed for low-threshold switching and amplification.

Best for

  • Logic-level switching
  • Battery-operated systems

Avoid if

  • High-current power switching

Check before use

  • Thermal management in TO-92 package

Key specifications

Vdss
-200 V
Id
-175 mA
Rds(on)
12 Ohm

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Logic-Level InterfacesBattery-Operated Systems

Datasheet

poYBAGNXDLyAXyDHAAS21kgjv-w532.pdf

800 KB

Datasheet AI

CAD Models

EDA symbol, PCB footprint, and 3D model for this component. Supported tools include Altium, KiCad, Eagle, and more.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement-mode vertical DMOS FET, typically used for logic-level interfaces and switching applications.