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TP65H070G4LSGB-TR-CN AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

TP65H070G4LSGB-TR-CN product

TP65H070G4LSGB-TR-CN

Chip Resistor - Surface Mount

650 VGaN FETNormally-offDFN 8 x 8 mm92 mOhm

A 650 V normally-off hybrid GaN FET intended for high-frequency power switching, with 92 mOhm typical dynamic RDS(on) and 14.4 nC typical total gate charge.

Best for

  • High-frequency power converters
  • Bridge and soft-switching topologies

Avoid if

  • Compliance or lifecycle documentation is required but unavailable
  • The layout cannot minimize gate and power-loop inductance

Check before use

  • Validate switching-node overshoot
  • Verify junction temperature and cooling
  • Use the Kelvin-source connection appropriately

Key specifications

Drain-source voltage
650 V
Dynamic on-resistance, typical
92 mOhm
Continuous drain current at case 25 C
18.9 A
Total gate charge, typical
14.4 nC

Compliance & Environment

RoHS
-
REACH
-
MSL
MSL 3
ECCN
-
HTSUS
-

Application

Power conversionIndustrial inverters

Datasheet

f239ebe7451a96356b1bc0797c2f660a_TP65H070G4LSGB-TR-CN.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for TP65H070G4LSGB-TR-CN: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

TP65H070G4LSGB-TR-CN is a ChipNobo 650 V hybrid normally-off GaN field-effect transistor in a DFN 8 x 8 mm package. It has a typical dynamic on-resistance of 92 mOhm at VGS = 10 V and ID = 12 A.