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TPCZT5551 AI Analysis:
Specs, Applications & Alternatives

AI summary

TPCZT5551 product

TPCZT5551

Transistors - Bipolar (BJT) - Single

NPNHigh VoltageAmplifier

The TPCZT5551 is a high-voltage NPN transistor in an SOT-223 package, suitable for high-voltage amplification tasks.

Best for

  • High-voltage amplifier circuits

Avoid if

  • Applications requiring extremely low power dissipation or very small form factors

Check before use

  • Thermal design for 1W dissipation

Key specifications

VCEO
160 V
IC
600 mA
Package
SOT-223

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

High-voltage amplification

Datasheet

f575546f5bb1c885c24ad28ff1d6bb5c_2309061011_TECH-PUBLIC-TPCZT5551_C7603317.pdf

800 KB

Datasheet AI

CAD Models

EDA symbol, PCB footprint, and 3D model for this component. Supported tools include Altium, KiCad, Eagle, and more.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The TPCZT5551 is an NPN silicon epitaxial planar transistor designed specifically for high-voltage amplifier applications.