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TPM2008EP3-A AI Analysis:
Specs, Applications & Alternatives

AI summary

TPM2008EP3-A product

TPM2008EP3-A

MOSFETs - Single

N-ChannelMOSFETDFN1006

The TPM2008EP3-A is a compact N-Channel MOSFET in a DFN1006-3L package, optimized for low-voltage, low-power switching applications.

Best for

  • Battery management
  • Logic level shifting
  • Portable device power switching

Avoid if

  • High-power applications exceeding 100mW dissipation

Check before use

  • Thermal management in high-density layouts

Key specifications

VDS
20 V
ID
0.7 A
RDS(on)
130 mΩ (typ)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Portable ElectronicsPower Management

Datasheet

6074b8cc5e65ce5c040efb1a76e2b043_2105241942_TECH-PUBLIC-TPM2008EP3-A_C2827633.pdf

800 KB

Datasheet AI

CAD Models

EDA symbol, PCB footprint, and 3D model for this component. Supported tools include Altium, KiCad, Eagle, and more.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for logic-level switching in space-constrained portable electronics.