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TPNCE01P30K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

TPNCE01P30K product

TPNCE01P30K

FETs

P-channel MOSFET100 V30 ATO-252-3LPower switching

TPNCE01P30K is a 100 V, 30 A P-channel power MOSFET with 40 mΩ typical on-resistance at VGS=-10 V, supplied in TO-252-3L.

Best for

  • High-side load switching
  • PWM power switching
  • General-purpose power control

Avoid if

  • The design requires an N-channel MOSFET
  • The available gate drive cannot provide the required negative VGS

Check before use

  • RDS(on) at the actual VGS and drain current
  • Junction temperature and PCB thermal path
  • TO-252-3L pin and tab connection

Key specifications

Channel
P-channel enhancement mode
VDS
-100 V
ID
-30 A at TC=25 °C
RDS(on)
40 mΩ typ. at VGS=-10 V
Package
TO-252-3L

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Load switchingPWM control

Datasheet

fc96ee2df6a5efb1458355abc1d16cbd_TPNCE01P30K.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for TPNCE01P30K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel enhancement-mode MOSFET with a -100 V drain-source rating, -30 A continuous drain-current rating at TC=25 °C, and a TO-252-3L package.