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UCC21710DWR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

UCC21710DWR product

UCC21710DWR

Isolators - Gate Drivers

reinforced isolationSiC MOSFETIGBTisolated gate driver±10 Aactive Miller clampovercurrent protectionanalog-to-PWM sensing

UCC21710DWR is a reinforced isolated, high-current single-channel gate driver for SiC MOSFETs and IGBTs. It combines ±10 A drive, fast protection, active Miller clamping, and an isolated analog-to-PWM sensing channel.

Best for

  • High-power SiC MOSFET gate drive
  • IGBT module gate drive
  • Applications needing reinforced isolation
  • Designs needing local fault protection and status reporting

Avoid if

  • A multi-channel driver is required in one package
  • The target gate-drive supply is below the specified output-side operating range
  • The application cannot accommodate isolated gate-drive power

Check before use

  • Validate switching losses and gate resistance with the selected power switch
  • Confirm OC threshold, deglitch time, and soft-turn-off response against fault requirements
  • Place VDD, VEE, and VCC bypass capacitors close to the device pins

Key specifications

Peak gate drive
±10 A source/sink
Isolation withstand voltage
5.7 kVRMS
Output supply range
13 V to 33 V
CMTI
150 V/ns minimum
Propagation delay
130 ns maximum
Overcurrent threshold
0.7 V typical

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Level-2-260C-1 YEAR
ECCN
-
HTSUS
-

Application

Industrial motor drivesIndustrial power suppliesSolar invertersUPS systems

Datasheet

szzq123

800 KB

Datasheet AI

CAD Models

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Alternative components

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Design and risk insights

Questions & answers

UCC21710DWR is a 16-pin DW SOIC tape-and-reel version of TI's UCC21710 reinforced isolated single-channel gate driver for SiC MOSFETs and IGBTs. It provides up to ±10 A peak gate drive and a 5.7 kVRMS isolation rating.