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UCC27710DR(UMW) AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

UCC27710DR(UMW) product

UCC27710DR(UMW)

MOSFETs - Single

650 V gate driverhalf bridgebootstrap driverMOSFET driverIGBT driverSOP-8

UCC27710DR is an SOP-8 high- and low-side driver for MOSFET or IGBT half bridges, using a bootstrap supply for the floating high-side channel.

Best for

  • Bootstrap half-bridge gate drive
  • Motor-control inverters
  • General-purpose inverter stages

Avoid if

  • A continuously on high-side switch must operate without bootstrap refresh
  • A design requires verified dead time not confirmed by system testing
  • A higher gate-drive current is required

Check before use

  • VCC supply is within 10 V to 20 V
  • Bootstrap supply supports high-side on-time requirements
  • VS overshoot and switching dV/dt remain within limits
  • Gate resistor values suit the selected MOSFET or IGBT

Key specifications

Driver topology
High-side and low-side half-bridge driver
High-side voltage rating
650 V absolute maximum
Output drive capability
0.6 A source / 1 A sink typical
Driver supply
10 V to 20 V recommended
Package
SOP-8

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor controlInverter drivesAppliance power stages

Datasheet

2369ce4084b0dcf662f19d48b5b9eb04_UCC27710DR(UMW).pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for UCC27710DR(UMW): KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

UCC27710DR(UMW) is a UMW 650 V half-bridge gate-driver IC for driving high-side and low-side N-channel MOSFETs or IGBTs. Its high-side channel is floating and intended for bootstrap operation.