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UJ3C120080K3S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

UJ3C120080K3S product

UJ3C120080K3S

Transistors

SiC FET1200VCascodePower Switch

The UJ3C120080K3S is a 1200V, 80mΩ SiC FET in a TO-247-3L package, designed as a high-efficiency, drop-in replacement for traditional power switches.

Best for

  • EV charging
  • PV inverters
  • Motor drives

Avoid if

  • Applications requiring non-standard gate drive voltages outside the specified range.

Check before use

  • PCB layout parasitics and gate resistor selection.

Key specifications

VDS
1200 V
RDS(on)
80 mΩ
ID
33 A
TJ,max
175 °C

Compliance & Environment

RoHS
Y
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ConversionIndustrial

Datasheet

f5484bef08d56bf2b3134e27f488b33e_2312051100_Qorvo-UJ3C120080K3S_C6731596.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for UJ3C120080K3S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a normally-off SiC FET device using a cascode configuration, combining a SiC JFET and a Si MOSFET to provide high-voltage blocking with standard gate-drive compatibility.