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UMH3NFHATN AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

UMH3NFHATN product

UMH3NFHATN

Transistors - Bipolar (BJT) - Arrays

dual digital transistordual NPNpre-biased transistorDTC143TSOT-363UMT6AEC-Q10150 V100 mA

UMH3NFHATN is a compact dual NPN digital-transistor array for low-current inverter, interface, and driver functions. It combines two independent DTC143T elements with integrated 4.7 kΩ input resistors in a SOT-363 package.

Best for

  • Space-constrained dual low-current NPN switching
  • Inverter and interface stages
  • Automotive designs requiring AEC-Q101 qualification

Avoid if

  • A discrete transistor without an integrated input resistor is required
  • Collector current above 100 mA per element is required
  • High power dissipation is expected in the small SOT-363 package

Check before use

  • Verify the package pinout: DTr1 emitter/base/collector are pins 1/2/6 and DTr2 collector/emitter/base are pins 3/4/5.
  • Calculate dissipation for each transistor element and keep it below 120 mW.
  • Account for input-resistor tolerance in drive-current calculations.

Key specifications

Configuration
Two independent NPN digital transistors
Collector-emitter voltage
50 V
Collector current
100 mA per element
Integrated input resistor
4.7 kΩ typical
Package
SOT-363 (UMT6 / SC-88), 6 pins
Qualification
AEC-Q101

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Automotive low-current switchingInterface and logic inversionCompact driver circuits

Datasheet

UMH3NFHATN-Rohm-datasheet-82984241.pdf

800 KB

Datasheet AI

CAD Models

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Alternative components

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Design and risk insights

Questions & answers

UMH3NFHATN is a ROHM dual NPN digital transistor array. It integrates two independent DTC143T transistor elements with built-in input resistors in a 6-pin SOT-363/UMT6 package.