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UMY1N AI Analysis:
Specs, Applications & Alternatives

AI summary

UMY1N product

UMY1N

Bipolar (BJT)

Dual TransistorBJTSOT-353

The UMY1N is a dual PNP+NPN transistor array in a SOT-353 package, featuring common emitters for space-saving designs.

Best for

  • General purpose switching
  • Signal amplification
  • Space-constrained PCB designs

Avoid if

  • High-power applications exceeding 150mW
  • New designs requiring long-term availability

Check before use

  • Verify current lifecycle status
  • Check thermal dissipation requirements

Key specifications

Configuration
PNP + NPN (Common Emitter)
VCEO
50 V
IC
150 mA

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

General

Datasheet

129e453f633cda0fcba6cf1bfc38031a_2201191030_Jiangsu-Changjing-Electronics-Technology-Co---Ltd--UMY1N_C2961232.pdf

800 KB

Datasheet AI

CAD Models

EDA symbol, PCB footprint, and 3D model for this component. Supported tools include Altium, KiCad, Eagle, and more.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The UMY1N is a dual-transistor device integrating one 2SA1037AK (PNP) and one 2SC2412K (NPN) transistor into a single SOT-353 package with common emitters.