US6X8TR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

US6X8TR product

US6X8TR

Transistors - Bipolar (BJT) - Arrays

dual NPN30 V1 ASOT-363TTUMT6low saturation voltage

US6X8TR is a compact dual NPN transistor array for low-frequency amplification and general switching where up to 30 V and 1 A per transistor are required.

Best for

  • Compact low-frequency amplifier stages
  • Dual low-side or small-signal switching functions
  • Designs requiring two matched transistor functions in one package

Avoid if

  • Applications exceeding 30 V collector-emitter voltage
  • High continuous dissipation without verified thermal margin
  • Designs requiring documented RoHS, REACH, lifecycle, or qualification evidence from the supplied sources

Check before use

  • Confirm Tr1 and Tr2 pin assignments
  • Calculate dissipation using the actual mounting condition
  • Provide adequate base current for the required saturation voltage
  • Validate SOA for pulse and DC operating conditions

Key specifications

Configuration
Dual NPN transistor
Collector-emitter voltage
30 V
Collector current
1 A per transistor
Saturation voltage
350 mV max. at IC=500 mA, IB=25 mA
Package
SOT-363T (TUMT6), 6 pins

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-frequency amplifiersCompact transistor switching stages

CAD Models

Download ECAD models for US6X8TR: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

US6X8TR is a ROHM dual NPN complex medium-power transistor containing two similar NPN transistors in a 6-pin SOT-363T (TUMT6) surface-mount package.