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VNP10N07-E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

VNP10N07-E product

VNP10N07-E

Power Distribution Switches

MOSFETOMNIFETProtected

The VNP10N07-E is a fully protected OMNIFET power MOSFET designed for robust switching applications up to 50 kHz.

Best for

  • Inductive load switching
  • Harsh environment power control

Avoid if

  • Applications requiring switching frequencies above 50 kHz

Check before use

  • Thermal dissipation requirements during current limiting events

Key specifications

VDS
70 V
ID
10 A
RDS(on)
0.1 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingIndustrial

Datasheet

VNP10N07-E-STMicroelectronics-datasheet-8369144.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for VNP10N07-E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a monolithic, fully autoprotected power MOSFET using ST's VIPower technology, designed to replace standard MOSFETs in harsh environments.