It is a P-channel enhancement-mode MOSFET from HXY MOSFET, specified for -15 V drain-source operation and packaged in DFN2X2B-6L.
WPM1481-6-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD
AI summary
Key specifications
- Channel
- P-channel enhancement mode
- VDS
- -15 V
- ID continuous
- -16 A
- RDS(on)
- 22 mOhm max at VGS=-4.5 V, ID=-10 A
- Package
- DFN2X2B-6L
Compliance & Environment
- RoHS
- -
- REACH
- -
- MSL
- -
- ECCN
- -
- HTSUS
- -
Application
Battery protectionLoad switchPWM switching
Datasheet
CAD Models
Download ECAD models for WPM1481-6-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.
EDA Symbol
Schematic symbol for your EDA tool
PCB Footprint
Land pattern for PCB layout
3D Model
STEP file for mechanical design
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Alternative components
Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.
