WPM1481-6-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

WPM1481-6-HXY product

WPM1481-6-HXY

FETs

P-channel MOSFET-15 VDFN2X2B-6LLoad switch

WPM1481-6-HXY is a -15 V P-channel MOSFET for compact load switching and battery protection. It supports up to -16 A continuous drain current under the datasheet conditions.

Best for

  • Compact high-side load switches
  • Battery protection circuits
  • PWM switching

Avoid if

  • The circuit requires drain-source voltage above 15 V
  • The design cannot control P-channel gate polarity

Check before use

  • Gate-source voltage during switching
  • Thermal resistance and board copper area
  • Pin assignment and exposed-pad layout

Key specifications

Channel
P-channel enhancement mode
VDS
-15 V
ID continuous
-16 A
RDS(on)
22 mOhm max at VGS=-4.5 V, ID=-10 A
Package
DFN2X2B-6L

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery protectionLoad switchPWM switching

CAD Models

Download ECAD models for WPM1481-6-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel enhancement-mode MOSFET from HXY MOSFET, specified for -15 V drain-source operation and packaged in DFN2X2B-6L.