For BusinessPricing
Request a demo

XR10N10Q AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

XR10N10Q product

XR10N10Q

MOSFETs - Single

N-channel MOSFET100 VSOT-89-3L85 mΩpower switching

XR10N10Q is a 100 V N-channel SOT-89-3L MOSFET with 85 mΩ typical RDS(on) at 10 V gate drive and a 10 A continuous current rating at TC=25°C.

Best for

  • 100 V low-side switching
  • Synchronous buck converter stages
  • Compact power switching circuits

Avoid if

  • A guaranteed low RDS(on) is required with gate drive below 4.5 V
  • The application exceeds SOT-89-3L thermal capability

Check before use

  • Verify drain-voltage transients remain below 100 V
  • Evaluate board-level thermal dissipation
  • Use the RDS(on) value applicable to the actual gate-drive voltage

Key specifications

Drain-source voltage
100 V
On-resistance
85 mΩ typ. at VGS=10 V, ID=10 A
Continuous drain current
10 A at TC=25°C
Total gate charge
26.2 nC typ.
Package
SOT-89-3L

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Synchronous buck convertersGeneral power switching

Datasheet

8a3792e6fddf7a409087adfd93b81bbf_XR10N10Q.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for XR10N10Q: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

XR10N10Q is an XNRUSEMI 100 V N-channel trench MOSFET supplied in an SOT-89-3L package. The datasheet specifies 85 mΩ typical on-resistance at VGS=10 V and ID=10 A.