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YHJ-65H225DDC AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

YHJ-65H225DDC product

YHJ-65H225DDC

MOSFETs - Single

GaNHEMT650VPower Transistor

The YHJ-65H225DDC is a 650V GaN HEMT transistor in a DFN-5x6 package, optimized for high-efficiency power conversion applications.

Best for

  • SMPS
  • AC/DC Converters
  • Motor Drives

Avoid if

  • Applications requiring extremely high current beyond 8A continuous.

Check before use

  • Gate drive voltage compatibility and thermal dissipation requirements.

Key specifications

Vdss
650 V
Id
8 A
Rds(on)
215 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesMotor Drives

Datasheet

454b8ffda4d88cd2c8c6d58e89c0aec7_2406111453_NITRIDE-YHJ-65H225DDC_C22458938.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for YHJ-65H225DDC: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an integrated GaN HEMT transistor designed for high-voltage, high-speed power applications.