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YJD112030NG1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

YJD112030NG1 product

YJD112030NG1

Diodes - Rectifiers - Single

SiCSchottky1200VPower Diode

The YJD112030NG1 is a 1200V SiC Schottky diode optimized for high-efficiency power conversion, offering zero reverse recovery and high thermal stability up to 175°C.

Best for

  • Power Factor Correction (PFC)
  • Solar Inverters
  • EV Chargers

Avoid if

  • Low-frequency, low-power applications where standard silicon diodes are more cost-effective.

Check before use

  • Thermal design and heat sink requirements.

Key specifications

VRRM
1200 V
IF (135°C)
38 A
Qc
153 nC

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

81ebda3bbbe772e3b2187eb4ebcda90b_2110210930_Yangzhou-Yangjie-Elec-Tech-YJD112030NG1_C2908535.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for YJD112030NG1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) Schottky diode in a TO-247AC package, designed for high-efficiency power electronics.