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YJG25GP10AQ AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

YJG25GP10AQ product

YJG25GP10AQ

MOSFETs - Single

P-ChannelMOSFETAutomotive100V

The YJG25GP10AQ is an AEC-Q101 qualified P-Channel MOSFET designed for power management and portable applications, featuring -100V drain-source voltage and -25A current capability.

Best for

  • Automotive power management
  • Portable equipment

Avoid if

  • Applications requiring N-Channel logic
  • High-frequency switching beyond device capabilities

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-100 V
ID
-25 A
RDS(on)
<55 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementAutomotive

Datasheet

65658043227fb2e9c72549393da7ef0f_2401111813_Yangzhou-Yangjie-Elec-Tech-YJG25GP10AQ_C20605777.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for YJG25GP10AQ: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel Enhancement Mode MOSFET utilizing split gate trench technology, suitable for automotive and general power management.