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YJG60G10BQ AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

YJG60G10BQ product

YJG60G10BQ

MOSFETs - Single

N-channel MOSFET100 V60 A12 mΩPDFN5060-8LAEC-Q101Automotive

YJG60G10BQ is a 100 V N-channel power MOSFET rated for 60 A at TC=25 °C, with 12 mΩ maximum RDS(on) at a 10 V gate drive. Its PDFN5060-8L package and AEC-Q101 suffix make it suited to compact automotive power switching.

Best for

  • High-frequency power switching
  • Synchronous rectification
  • 12 V, 24 V, and 48 V automotive power systems

Avoid if

  • Drain-source voltage can exceed 100 V including switching transients
  • Thermal design cannot keep junction temperature below 150 °C
  • A verified lifecycle status is required but unavailable

Check before use

  • Gate-drive level and 4.5 V versus 10 V RDS(on) requirement
  • PCB copper area and thermal path for the PDFN5060-8L package
  • Body-diode and reverse-recovery loss in synchronous switching
  • Automotive qualification requirements beyond AEC-Q101

Key specifications

Drain-source voltage
100 V
Continuous drain current
60 A at TC=25 °C
On-resistance
12 mΩ max at VGS=10 V, ID=20 A
Logic-drive on-resistance
15 mΩ max at VGS=4.5 V, ID=20 A
Package
PDFN5060-8L
Junction temperature range
-55 °C to +150 °C

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Automotive power switchingSynchronous rectificationHigh-frequency switching converters

Datasheet

cda398b724cbf0c591953443d643aa17_YJG60G10BQ.pdf

800 KB

Datasheet AI

CAD Models

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

YJG60G10BQ is a 100 V N-channel enhancement-mode power MOSFET from Yangjie. It uses split-gate trench MOSFET technology and is supplied in a PDFN5060-8L surface-mount package.