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ZXTN5551GTA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ZXTN5551GTA product

ZXTN5551GTA

Transistors - Bipolar (BJT) - Single

NPNBJTHigh VoltageSOT223

The ZXTN5551GTA is a 160V NPN Bipolar Transistor designed for high-voltage amplification, currently marked as 'Not Recommended for New Design' by Diodes Incorporated.

Best for

  • High voltage amplification circuits

Avoid if

  • Designing new products (use DZT5551 instead)

Check before use

  • Verify availability of the recommended replacement DZT5551

Key specifications

VCEO
160 V
IC
600 mA
Package
SOT223

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Level 1
ECCN
EAR99
HTSUS
8541290095.0

Application

High Voltage Amplification

Datasheet

ZXTN5551GTA-Diodes-Inc.-datasheet-14188842.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ZXTN5551GTA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage NPN Bipolar Transistor (BJT) capable of handling up to 160V VCEO and 600mA continuous collector current, housed in a SOT223 surface-mount package.